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Wang G. Quantum confinement induced by strain relaxation in an elliptical double-barrier Si∕Si_{x}Ge_{1−x} resonant tunneling quantum dot Phys. Rev. B 73 (11) (2006) doi: 10.1103/PhysRevB.73.115319

CIOBANU C, TAMBE D, SHENOY V. First-principles calculations of step formation energies and step interactions on TiN(001) Surface Science 582 (1-3) , 145 - 150 (2005) doi: 10.1016/j.susc.2005.03.025

Tambe D, Ciobanu C, Shenoy V. Self-assembly of steps and vacancy lines during the early stages of Ge∕Si(001) heteroepitaxy Appl. Phys. Lett. 87 (25) (2005) doi: 10.1063/1.2147720

Ciobanu C. Comparative study of dimer-vacancies and dimer-vacancy lines on Si(0 0 1) and Ge(0 0 1) Surface Science 556 (2-3) , 171 - 183 (2004) doi: 10.1016/j.susc.2004.03.018