Jang-Sik Lee: all publications

• Publications

  • Kim Y, Lee J. Tunable work functions of platinum gate electrode on HfO[sub 2] thin films for metal-oxide-semiconductor devices Appl. Phys. Lett. 92 (10) (2008) doi: 10.1063/1.2892045

  • The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing IEEE Trans. Electron Devices 54 (9) , 2546 - 2550 (2007) doi: 10.1109/TED.2007.901880

  • Lee C, Kwon J, Lee J, Kim Y, Choi Y, Shin H, Lee J, Sohn B. Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals Appl. Phys. Lett. 91 (15) (2007) doi: 10.1063/1.2798502

  • Lee J, Cho J, Lee C, Kim I, Park J, Kim Y, Shin H, Lee J, Caruso F. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties Nature Nanotech 2 (12) , 790 - 795 (2007) (Epub 02 Dec 2007) doi: 10.1038/nnano.2007.380

  • Lee J, Kang B, Jia Q. Data retention characteristics of Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] thin films on conductive SrRuO[sub 3] electrodes Appl. Phys. Lett. 91 (14) (2007) doi: 10.1063/1.2780118

  • Lee J, Lee J, Joo S. Precise control of phase transformation process in lead zirconate titanate thin films by focused line-beam scanning Appl. Phys. Lett. 90 (13) (2007) doi: 10.1063/1.2719636

  • Kim M, Song N, Han S, Joo S, Lee J. Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering Appl. Phys. Lett. 89 (23) (2006) doi: 10.1063/1.2400108

  • Lee J, Kang C, Shin Y, Lee C, Park K, Sel J, Kim V, Choe B, Sim J, Choi J, Kim K. Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High- Jpn. J. Appl. Phys. 45 (No. 4B) , 3213 - 3216 (2006) (Epub 25 Apr 2006) doi: 10.1143/JJAP.45.3213

  • Lee J, Wang H, Lee S, Foltyn S, Jia Q. Lateral epitaxial growth of (Ba,Sr)TiO[sub 3] thin films Appl. Phys. Lett. 83 (26) (2003) doi: 10.1063/1.1637445